| PART |
Description |
Maker |
| SML10SIC06Y |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| C4D15120A |
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier
|
Cree, Inc
|
| C4D10120D |
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier
|
Cree, Inc
|
| C3D02060E-13 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
